Parallel Finite Element Simulations on Radiation Damage Effects of Lateral PNP BJTs

Authors

Wang Qin, 1. LSEC,NCMIS,Institute of Computational Mathematics and Scientific/Engineering Computing,Academy of Mathematics and Systems Science,Chinese Academy of Sciences,Beijing 100190,China; ;2. School of Mathematical Sciences,University of Chinese Academy of Sciences,Beijing 100049,China; ;
Zhaocan Ma, 1. LSEC,NCMIS,Institute of Computational Mathematics and Scientific/Engineering Computing,Academy of Mathematics and Systems Science,Chinese Academy of Sciences,Beijing 100190,China; ;2. School of Mathematical Sciences,University of Chinese Academy of Sciences,Beijing 100049,China; ;
Hongliang Li, 3. Department of Mathematics,Sichuan Normal University,Chengdu 610066,China;
Linbo Zhang, 1. LSEC,NCMIS,Institute of Computational Mathematics and Scientific/Engineering Computing,Academy of Mathematics and Systems Science,Chinese Academy of Sciences,Beijing 100190,China; ;2. School of Mathematical Sciences,University of Chinese Academy of Sciences,Beijing 100049,China; ;
Benzhuo Lu, 1. LSEC,NCMIS,Institute of Computational Mathematics and Scientific/Engineering Computing,Academy of Mathematics and Systems Science,Chinese Academy of Sciences,Beijing 100190,China; ;2. School of Mathematical Sciences,University of Chinese Academy of Sciences,Beijing 100049,China; ;

Abstract

Abstract: The Zlamal finite element discretization is applied in the drift-diffusion model for the simulations of semiconductor devices.Combined with the coupled ionization damage model,the ionization damage effects of lateral PNP (LPNP) bipolar junction transistors (BJT) are simulated.The model and algorithm are implemented based on the three-dimensional parallel adaptive finite element toolbox PHG (Parallel Hierarchical Grid).The phenomena of excess base current and current gain degradation in LPNP BJTs are successfully simulated via numerical calculation. A large-scale numerical experiment with 100 million elements and 1 024 MPI processes is carried out,demonstrating the good parallel scalability of the algorithm.

Recommended Citation

Qin, Wang; Ma, Zhaocan; Li, Hongliang; Zhang, Linbo; and Lu, Benzhuo (2020) "Parallel Finite Element Simulations on Radiation Damage Effects of Lateral PNP BJTs," Journal of System Simulation: Vol. 32: Iss. 12, Article 9.
DOI: 10.16182/j.issn1004731x.joss.20-FZ0477
Available at: https://dc-china-simulation.researchcommons.org/journal/vol32/iss12/9

First Page

2376

Revised Date

2020-07-12

DOI Link

https://doi.org/10.16182/j.issn1004731x.joss.20-FZ0477

Last Page

2382

CLC

TP391.9

Recommended Citation

Wang Qin, Ma Zhaocan, Li Hongliang, Zhang Linbo, Lu Benzhuo. Parallel Finite Element Simulations on Radiation Damage Effects of Lateral PNP BJTs[J]. Journal of System Simulation, 2020, 32(12): 2376-2382.

DOI

10.16182/j.issn1004731x.joss.20-FZ0477