Dynamic Simulation of Single Abrasive Grain Cutting TC4 Based on SPH Method

Authors

Wang Yan, 1. School of Mechanical Engineering, University of Shanghai for Science and Technology, Shanghai 200093, China; ;
Wang Shuai, 1. School of Mechanical Engineering, University of Shanghai for Science and Technology, Shanghai 200093, China; ;
Jianguo Liu, 1. School of Mechanical Engineering, University of Shanghai for Science and Technology, Shanghai 200093, China; ;
Xiong Wei, 2. School of Materials Science and Engineering, University of Shanghai for Science and Technology, Shanghai 200093, China;

Abstract

Abstract: Considering the negative effects of mesh distortion on calculation accuracy in FEM simulation, a novel mesh free method named Smoothed Particle Hydrodynamics (SPH) method was employed to simulate the process of single CBN abrasive grain cutting TC4. Establishing a SPH model of TC4 workpiece and a FEM model of single abrasive grain with cutting edges similar to the real abrasive grain, the influences of cutting depth on grinding forces and chip formative process were studied systematically. The simulation results state that grinding forces enlarge with the increase of cutting depth, while grinding force ratio decreases. And TC4 chip formative process is also closely related with cutting depth. The simulation results have little error compared with theoretical analysis, verifying the feasibility of applying SPH method to simulate the cutting process of titanium alloy.

Recommended Citation

Yan, Wang; Shuai, Wang; Liu, Jianguo; and Wei, Xiong (2020) "Dynamic Simulation of Single Abrasive Grain Cutting TC4 Based on SPH Method," Journal of System Simulation: Vol. 27: Iss. 11, Article 35.
Available at: https://dc-china-simulation.researchcommons.org/journal/vol27/iss11/35

First Page

2865

Revised Date

2015-05-28

DOI Link

https://doi.org/

Last Page

2872

CLC

TG580.1

Recommended Citation

Wang Yan, Wang Shuai, Liu Jianguo, Xiong Wei. Dynamic Simulation of Single Abrasive Grain Cutting TC4 Based on SPH Method[J]. Journal of System Simulation, 2015, 27(11): 2865-2872.