Study and Performance Analysis of Bar TSV Structure

Authors

Zhensong Li, 1. School of Information and Communication Engineering Beijing University of Posts and Telecommunications, Beijing 100876, China;;2. School of Information and Communication Engineering Beijing Information Science & Technology University, Beijing 100192, China;
Miao Min, 2. School of Information and Communication Engineering Beijing Information Science & Technology University, Beijing 100192, China;

Abstract

Abstract: A bar-through silicon via (B-TSV) structure is studied, and its 3D model and equivalent circuit model are proposed. The effects of design parameters formulas are investigated and concluded by a 3D electromagnetic solver. Performance comparison between B-TSV and the conventional cylindrical one is provided by simulation under the Ground-Signal-Ground configuration. The B-TSV structures are designed and fabricated in a printed circuit board (PCB) and the measured performance is given. Test results confirm that B-TSV has better performance than traditional one.

Recommended Citation

Li, Zhensong and Min, Miao (2018) "Study and Performance Analysis of Bar TSV Structure," Journal of System Simulation: Vol. 30: Iss. 6, Article 6.
DOI: 10.16182/j.issn1004731x.joss.201806006
Available at: https://dc-china-simulation.researchcommons.org/journal/vol30/iss6/6

First Page

2044

Revised Date

2016-10-17

DOI Link

https://doi.org/10.16182/j.issn1004731x.joss.201806006

Last Page

2049

CLC

TN405

Recommended Citation

Li Zhensong, Miao Min. Study and Performance Analysis of Bar TSV Structure[J]. Journal of System Simulation, 2018, 30(6): 2044-2049.

Corresponding Author

Miao Min,

DOI

10.16182/j.issn1004731x.joss.201806006