Fractional-order Memristor Model with Nonlinear Drift Function

Authors

Zhaohui Gan, School of Information Science and Engineering, Wuhan University of Science and Technology, Wuhan 430081, China;
Shiying Zhang, School of Information Science and Engineering, Wuhan University of Science and Technology, Wuhan 430081, China;
Yuxin Wu, School of Information Science and Engineering, Wuhan University of Science and Technology, Wuhan 430081, China;

Abstract

Abstract: A memristor is a nonlinear resistor with memory. It is regarded as the fourth basic circuit elements. The fractional order model of memristor is an extension of integer order model for memristor. Some researchers have confirmed the existence of fractional order model for memristor, and the response characteristic of the fractional order model excited by different types of signals is analyzed. Based on the analysis of some existing integer order and fractional order models for memristor, a novel fractional order memristor model with nonlinear drift function is proposed, and the response characteristics of fractional order model for memristor with nonlinear drift function excited by step signal, sine and non-sinusoidal periodic signals are analyzed. The experiment results show that the proposed model can simulate fractional order memristor characteristic well. The influence of fractional order and control parameters on the characteristic of memristor is also analyzed and summarized. These results have a certain reference value for some memristor applications in electrical field.

Recommended Citation

Gan, Zhaohui; Zhang, Shiying; and Wu, Yuxin (2019) "Fractional-order Memristor Model with Nonlinear Drift Function," Journal of System Simulation: Vol. 30: Iss. 8, Article 9.
DOI: 10.16182/j.issn1004731x.joss.201808009
Available at: https://dc-china-simulation.researchcommons.org/journal/vol30/iss8/9

First Page

2884

DOI Link

https://doi.org/10.16182/j.issn1004731x.joss.201808009

Last Page

2891

CLC

TN710

Recommended Citation

Gan Zhaohui, Zhang Shiying, Wu Yuxin. Fractional-order Memristor Model with Nonlinear Drift Function[J]. Journal of System Simulation, 2018, 30(8): 2884-2891.

DOI

10.16182/j.issn1004731x.joss.201808009